公开(公告)号：US20230071985A1

公开(公告)日：2023-03-09

申请号：US17749800

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Minhyoung KIM ,  Inseong KIM ,  Seokyoung PARK ,  Sangjin AN ,  Inhye JEONG ,  Kyusik CHOI

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/66

Abstract: A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.

公开(公告)号：US20190295843A1

公开(公告)日：2019-09-26

申请号：US16294453

申请日：2019-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomjin YOO ,  Minhyoung KIM ,  Wonhyuk JANG ,  Hoseop CHOI ,  Jeongmin BANG ,  KyuHee HAN

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.