公开(公告)号：US20190295843A1

公开(公告)日：2019-09-26

申请号：US16294453

申请日：2019-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomjin YOO ,  Minhyoung KIM ,  Wonhyuk JANG ,  Hoseop CHOI ,  Jeongmin BANG ,  KyuHee HAN

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

公开(公告)号：US20190122866A1

公开(公告)日：2019-04-25

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira KOSHIISHI ,  Kwangyoub HEO ,  Sunggil KANG ,  Beomjin YOO ,  Sungyong LIM ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US20190096636A1

公开(公告)日：2019-03-28

申请号：US15940621

申请日：2018-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki NAM ,  Sung Yong LIM ,  Beomjin YOO ,  Jongwoo SUN ,  Kyuhee HAN ,  Kwangyoub HEO ,  Je-Woo HAN

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber including a space for processing a substrate, a substrate stage supporting the substrate within the chamber and including a lower electrode, an upper electrode within the chamber facing the lower electrode, a first power supply including a sinusoidal wave power source configured to apply a sinusoidal wave power to the lower electrode to form plasma within the chamber, and a second power supply configured to apply a nonsinusoidal wave power to the upper electrode to generate an electron beam.