公开(公告)号：US20230018305A1

公开(公告)日：2023-01-19

申请号：US17947320

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon KIM ,  Junyoung KO ,  Sangwan NAM ,  Minjae SEO ,  Jiwon SEO ,  Hojun LEE

IPC: G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/04 ,  G11C16/30 ,  G11C16/34 ,  G11C16/26

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

公开(公告)号：US20220139457A1

公开(公告)日：2022-05-05

申请号：US17234175

申请日：2021-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon KIM ,  Junyoung KO ,  Sangwan NAM ,  Minjae SEO ,  Jiwon SEO ,  Hojun LEE

IPC: G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/26 ,  G11C16/30 ,  G11C16/34 ,  G11C16/04

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.