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公开(公告)号:US20230038110A1
公开(公告)日:2023-02-09
申请号:US17858921
申请日:2022-07-06
Applicant: SAMSUNG SDI CO., LTD. , SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minyoung LEE , Hyungrang MOON , Ryunmin HEO , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO , Jung Min CHOI , Moohyun KOH , Jungah KIM , Sungan DO , Sang Won BAE , Hoon HAN , SukKoo HONG
Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.
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公开(公告)号:US20230176477A1
公开(公告)日:2023-06-08
申请号:US17841031
申请日:2022-06-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sukkoo HONG , Moohyun KOH , Kyungoh KIM , Yechan KIM , Kyunghwan NOH , Sungan DO , Hyun-Ji SONG
IPC: G03F7/004 , G03F7/38 , H01L21/027
CPC classification number: G03F7/0042 , G03F7/38 , H01L21/0274
Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond, the organometallic compound including a metal core and at least one organic ligand bonded to the metal core, and being configured such that the at least one metal-ligand bond is not breakable by exposure to light or moisture; a photoinitiator generating an acid or a radical in response to exposure to light; and a solvent.
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公开(公告)号:US20230037563A1
公开(公告)日:2023-02-09
申请号:US17858924
申请日:2022-07-06
Applicant: SAMSUNG SDI CO., LTD. , SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ryunmin HEO , Hyungrang MOON , Minyoung LEE , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO , Jung Min CHOI , Moohyun KOH , Jungah KIM , Sungan DO , Sang Won BAE , Hoon HAN , SukKoo HONG
IPC: G03F7/32
Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.
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