公开(公告)号：US20140299885A1

公开(公告)日：2014-10-09

申请号：US14070964

申请日：2013-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-moon LEE ,  Young-jin CHO ,  Myong-Jae LEE

IPC: H01L29/20

CPC classification number: H01L29/20 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546

Abstract: A substrate structure includes a substrate, a nucleation layer on the substrate and including a group III-V compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group III-V compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more.

Abstract translation: 衬底结构包括衬底，在衬底上的成核层，并且包括具有不同于衬底的晶格常数小于1％的晶格常数的III-V族化合物半导体材料，以及成核层上的缓冲层和 包括第一层和第二层，其中第一层和第二层包括具有大于成核层的晶格常数4％或更多的晶格常数的III-V族化合物半导体材料。