公开(公告)号：US20230170386A1

公开(公告)日：2023-06-01

申请号：US17888639

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Jin LEE ,  Beom Jin PARK ,  Myoung Sun LEE ,  Keun Hwi CHO ,  Dong Won KIM

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/775 ,  H01L29/6656 ,  H01L29/78696

Abstract: A semiconductor device includes first to fourth active patterns extending in a horizontal first direction. The second active pattern is spaced apart from the first active pattern in the first direction. The third active pattern is spaced apart from the first active pattern in a horizontal second direction. The fourth active pattern is spaced apart from the third active pattern in the first direction. A field insulating layer surrounds a sidewall of each of the first to fourth active patterns. First to fourth pluralities of nanosheets are respectively disposed the first to fourth active patterns. A first gate electrode extends in the second direction, intersects each of the first and third active patterns, and surrounds the first and third pluralities of nanosheets. A second gate electrode extends in the second direction, intersects each of the second and fourth active patterns, and surrounds the second and fourth pluralities of nanosheets.