公开(公告)号：US20230170386A1

公开(公告)日：2023-06-01

申请号：US17888639

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Jin LEE ,  Beom Jin PARK ,  Myoung Sun LEE ,  Keun Hwi CHO ,  Dong Won KIM

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/775 ,  H01L29/6656 ,  H01L29/78696

Abstract: A semiconductor device includes first to fourth active patterns extending in a horizontal first direction. The second active pattern is spaced apart from the first active pattern in the first direction. The third active pattern is spaced apart from the first active pattern in a horizontal second direction. The fourth active pattern is spaced apart from the third active pattern in the first direction. A field insulating layer surrounds a sidewall of each of the first to fourth active patterns. First to fourth pluralities of nanosheets are respectively disposed the first to fourth active patterns. A first gate electrode extends in the second direction, intersects each of the first and third active patterns, and surrounds the first and third pluralities of nanosheets. A second gate electrode extends in the second direction, intersects each of the second and fourth active patterns, and surrounds the second and fourth pluralities of nanosheets.

公开(公告)号：US20220130865A1

公开(公告)日：2022-04-28

申请号：US17336785

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin PARK ,  Myung Gil KANG ,  Dong Won KIM ,  Keun Hwi CHO

IPC: H01L27/12 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786 ,  H01L21/02 ,  H01L21/84 ,  H01L29/66

Abstract: A semiconductor device that reduces the occurrence of a leakage current by forming a doped layer in each of an NMOS region and a PMOS region on an SOT substrate, and completely separating the doped layer of the NMOS region from the doped layer of the PMOS region using the element isolation layer is provided. The semiconductor device includes a first region and a second region adjacent to the first region, a substrate including a first layer, an insulating layer on the first layer, and a second layer on the insulating layer, a first doped layer on the second layer in the first region and including a first impurity, a second doped layer on the second layer in the second region and including a second impurity different from the first impurity, and an element isolation layer configured to separate the first doped layer from the second doped layer, and in contact with the insulating layer.

公开(公告)号：US20210249347A1

公开(公告)日：2021-08-12

申请号：US17242548

申请日：2021-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Naoya INOUE ,  Dong Won KIM ,  Young Woo CHO ,  Ji Won KANG ,  Song Yi HAN

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

公开(公告)号：US20200343243A1

公开(公告)日：2020-10-29

申请号：US16926360

申请日：2020-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min KIM ,  Dong Won KIM

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768

Abstract: A semiconductor device is provided, which includes a first and second multichannel active patterns spaced apart from one another and extending in a first direction. The semiconductor device also includes first and second gate structures on the first and second multichannel active patterns, extending in a second direction and including first and second gate insulating films, respectively. Sidewalls of the first multichannel active pattern include first portions in contact with the first gate insulating film, second portions not in contact with the first gate insulating film, third portions in contact with the second gate insulating film, and fourth portions not in contact with the second gate insulating film. Additionally, a height of the first portions of the first multichannel active pattern is greater than a height of the third portions of the first multichannel active pattern.

公开(公告)号：US20240405104A1

公开(公告)日：2024-12-05

申请号：US18648580

申请日：2024-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gwon KIM ,  Myung Gil KANG ,  Jin Kyu KIM ,  Dong Won KIM ,  Beom Jin PARK

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: A semiconductor device is provided. The semiconductor includes at least one of a well area in a substrate and having a first conductivity-type; impurity-implanted areas in the well, and having a second conductivity-type different from the first conductivity-type and arranged in a first direction, a first fin structure on the impurity-implanted area and having the second conductivity-type, wherein the first fin structure includes first semiconductor patterns and first sacrificial patterns alternately stacked; a first contact on the first fin structure; a first epitaxial pattern on the well area and having the first conductivity-type; and a second contact on the first epitaxial pattern.

公开(公告)号：US20240222374A1

公开(公告)日：2024-07-04

申请号：US18457313

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gwon KIM ,  Myung Gil KANG ,  Soo Jin JEONG ,  Dong Won KIM ,  Beom Jin PARK ,  Hong Seon YANG

IPC: H01L27/092 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L21/28518 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region, a first gate structure that intersects the first active pattern, a first epitaxial pattern connected to the first active pattern and includes n-type impurities, a first source/drain contact that penetrates an upper surface of the first epitaxial pattern and is connected to the first epitaxial pattern, a second active pattern on the second region, a second gate structure that intersects the second active pattern, a second epitaxial pattern connected to the second active pattern and includes p-type impurities, and a second source/drain contact that penetrates an upper surface of the second epitaxial pattern and is connected to the second epitaxial pattern. A lower surface of the first source/drain contact is lower than a lower surface of the second source/drain contact.

公开(公告)号：US20230122379A1

公开(公告)日：2023-04-20

申请号：US17879134

申请日：2022-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Cheol MIN ,  Keon Yong CHEON ,  Myung Dong KO ,  Yong Hee PARK ,  Sang Hyeon LEE ,  Dong Won KIM ,  Woo Seung SHIN ,  Hyung Suk LEE

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.

公开(公告)号：US20200013777A1

公开(公告)日：2020-01-09

申请号：US16574887

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min KIM ,  Dong Won KIM ,  Geum Jong BAE

IPC: H01L27/088 ,  H01L27/02 ,  H01L21/8234

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.

公开(公告)号：US20180296051A1

公开(公告)日：2018-10-18

申请号：US16018836

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Soo JUNG ,  Dong Won KIM ,  Jun Hwa LEE

IPC: A47L9/28 ,  A47L9/30 ,  A47L9/10

Abstract: A robot cleaner includes a body; a driving unit; at least one sensor configured to detect an obstacle; a cleaning unit, the cleaning unit including a brush unit and a fan unit; a dust box to store dust inside of the dust box, the dust box being detachably mounted to the body; and a dust sensing unit including a light emitting unit to transmit light and a light receiving sensor to sense the light transmitted by the light emitting unit, the light emitting unit and the light receiving sensor being fixed on the body and outside of the dust box, and the light emitting unit being configured to transmit light through the inside of the dust box. The driving unit, the at least one sensor, the cleaning unit, the dust box, and the dust sensing unit are positioned on or in the body of the robot cleaner.

公开(公告)号：US20180028035A1

公开(公告)日：2018-02-01

申请号：US15711428

申请日：2017-09-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Du Hwan HYUN ,  Hwi Chan JANG ,  Dong Won KIM ,  Byoung In LEE ,  Sahng Jin LEE ,  Won Min LEE ,  Hyun Soo JUNG ,  Seung II HAN

IPC: A47L11/40 ,  A47L11/19 ,  A47L11/18 ,  A47L11/14

CPC classification number: A47L11/4036 ,  A47L11/145 ,  A47L11/185 ,  A47L11/19 ,  A47L11/4041 ,  A47L11/4044 ,  A47L11/4052 ,  A47L11/4083 ,  A47L2201/00

Abstract: A robot cleaner enables a wet cleaning, has a replaceable cleaning unit, and ensures a sufficient friction force for doing a wet cleaning of a floor. The robot cleaner includes a frame including a wheel for driving, a replaceable cleaning unit formed at a lower part of the frame to clean a bottom surface and disposed in front of the wheel, a tank disposed at an upper part of the wheel and configured to supply fluid to the cleaning unit, a pump configured to pump the fluid contained in the tank such that the fluid contained in the tank is supplied to the cleaning unit, a hose configured to extend to the pump and the upper part of the cleaning unit and through which the fluid pumped by the pump flows, and a bumper formed on a side of the frame.