公开(公告)号：US10964511B2

公开(公告)日：2021-03-30

申请号：US15864529

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo Shim ,  Myung Sun Choi ,  Nam Jun Kang ,  Doug Yong Sung ,  Sang Min Jeong ,  Peter Byung H Han

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.