摘要:
A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.
摘要:
A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.
摘要:
The invention provides a cured film and a positive type photosensitive resin composition unlikely to cause a decrease in light emission luminance or shrinkage of pixels and high in long term reliability.[Solution] The invention provides a cured film comprising a cured product of a photosensitive resin composition including an alkali-soluble resin (a), a photoacid generating agent (b), at least one compound (c) selected from the group consisting of cyclic amides, cyclic ureas, and derivatives thereof, and a thermal crosslinking agent (d), the thermal crosslinking agent (d) containing an epoxy compound, oxetanyl compound, isocyanate compound, acidic group-containing alkoxymethyl compound, and/or acidic group-containing methylol compound, and the total content of the compound (c) in the cured film being 0.005 mass % or more and 5 mass % or less. The photosensitive resin composition comprises the alkali-soluble resin (a), photoacid generating agent (b), compound (c), thermal crosslinking agent (d), and an organic solvent (e), the compound (c) accounting for 0.1 part by mass or more and 15 parts by mass or less relative to 100 parts by mass of the alkali-soluble resin (a), and the organic solvent (e) accounting for 100 to 3,000 parts by mass relative thereto.
摘要:
A resin composition comprising a binder resin (A), an aromatic compound (B) represented by the following general formula (1), and a cross-linking agent (C): where in the general formula (1), each of R1 to R8 respectively independently is hydrogen atom, hydroxyl group, carboxyl group, substituted or unsubstituted aliphatic hydrocarbon group having 1 to 12 carbon atoms, or substituted or unsubstituted aromatic hydrocarbon group having 6 to 12 carbon atoms, “m” is an integer of 0 to 2, when “m” is 0, at least two of R1 to R4, R6, and R7 are hydroxyl group, when “m” is 1 or 2, at least two of R1 to R8 are hydroxyl group, and, when “m” is 2 or more, regardless of the structure represented by general formula (1), three or more benzene rings present may be joined with each other at any positions.
摘要:
A method for forming a patterned cured film using a negative photosensitive composition. The composition includes a photopolymerizable compound and a photopolymerization initiator including an oxime ester compound of a specific structure having a 9,9-disubstituted fluorenyl group which is used for formation of a thick film resist pattern. The composition is mixed with an alkali-soluble resin which is a polymer of a monomer having an unsaturated double bond and includes a unit derived from a monomer having an aromatic group.
摘要:
A photosensitive resin material of the invention is a photosensitive resin material used to form a permanent film including one or more selected from a novolac-type phenol resin, a phenol aralkyl resin, and a hydroxystyrene resin as an alkali-soluble resin (A) and a photosensitive diazoquinone compound as a photosensitizing agent (B), in which a content of iron with respect to all non-volatile components, which is measured through flameless atomic absorption spectroscopy, is equal to or more than 0.005 ppm and equal to or less than 80 ppm, and non-ionic iron is included as the iron.
摘要:
Provided is a photosensitive resin composition which comprises: (A-1) a resin containing a structure represented by general formula (1); and (B) a photo-acid generating agent. In general formula (1), X, R1 to R7, m1 to m4, n1, n2, Y and W are each as defined in the description.
摘要:
The present invention discloses a photosensitive resin composition for an insulating film of a display device including (A) an alkali soluble resin; (B) a photosensitive diazoquinone compound; (C) a color material having a maximum absorption wavelength of 400 to 550 nm; and (D) a solvent, an insulation film using the same, and a display device including the insulation film.
摘要:
The present invention provides a positive-type photosensitive resin composition capable of obtaining a cured film which exhibits low warpage, and is also excellent in high sensitivity and high resolution during firing at a lower temperature of 250° C. or lower. Disclosed is a positive-type photosensitive resin composition including (a) a polyimide resin including a structural unit represented by the general formula (1) and a structural unit represented by the general formula (2), and (b) a quinonediazide compound, wherein the polyimide resin including a structural unit represented by the general formula (1) and a structural unit represented by the general formula (2) has an imidation ratio of 85% or more, and also a ratio of the structural unit represented by the general formula (1) to the structural unit represented by the general formula (2) is within a range of 30:70 to 90:10, in which X1 in the general formula (1) represents a tetracarboxylic acid residue including 1 to 4 aromatic rings, and Y1 represents an aromatic diamine residue including 1 to 4 aromatic rings, and in which X2 in the general formula (2) represents a tetracarboxylic acid residue including 1 to 4 aromatic rings, and Y2 represents a diamine residue including at least two or more alkylene glycol units in the main chain.
摘要:
The present invention relates to polynorbornene (PNB) composition embodiments that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs having norbornene-type repeating units that are polyether functionalized and an additive package containing a phenolic antioxidant and a synergist, and the microelectronic and/or optoelectronic devices made therefrom are resistant to thermo-oxidative chain degradation of said polyether functionalization.