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公开(公告)号:US20210249347A1
公开(公告)日:2021-08-12
申请号:US17242548
申请日:2021-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Naoya INOUE , Dong Won KIM , Young Woo CHO , Ji Won KANG , Song Yi HAN
IPC: H01L23/522 , H01L21/768 , H01L23/532
Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.
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公开(公告)号:US20170278786A1
公开(公告)日:2017-09-28
申请号:US15464773
申请日:2017-03-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Naoya INOUE , Dong Won KIM , Young Woo CHO , Ji Won KANG , Song Yi HAN
IPC: H01L23/522 , H01L21/768 , H01L23/532
CPC classification number: H01L23/5222 , H01L21/7682 , H01L21/76834 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295
Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.
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