公开(公告)号：US20180358055A1

公开(公告)日：2018-12-13

申请号：US16106492

申请日：2018-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： REUM OH ,  JE-MIN RYU ,  PAVAN KUMAR KASIBHATLA

IPC: G11C5/02 ,  G11C29/12 ,  G06F12/0893 ,  G11C7/10 ,  G11C29/48 ,  G06F12/084 ,  H01L25/18

CPC classification number: G11C5/02 ,  G06F12/084 ,  G06F12/0893 ,  G11C5/025 ,  G11C7/1006 ,  G11C29/1201 ,  G11C29/48 ,  G11C2207/2245 ,  H01L25/18

Abstract: A memory device includes a memory cell array having a plurality of memory cell groups with a corresponding plurality of independent channels, and the device and an operating method thereof perform an internal data processing operation for the memory cell groups. The memory device includes an internal command generator configured to generate one or more internal commands in order to perform an internal data processing operation in response to a reception of a command, and an internal common bus for a common internal processing channel which is disposed to be shared by the plurality of memory cell groups and configured to form a transmission path of data between the plurality of memory cell groups when the internal data processing operation is performed.

公开(公告)号：US20190198061A1

公开(公告)日：2019-06-27

申请号：US16293372

申请日：2019-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： REUM OH ,  JE-MIN RYU ,  PAVAN KUMAR KASIBHATLA

IPC: G11C5/02 ,  G06F12/0893 ,  G11C29/12 ,  G11C29/48 ,  G06F12/084 ,  G11C7/10

CPC classification number: G11C5/02 ,  G06F12/084 ,  G06F12/0893 ,  G11C5/025 ,  G11C7/1006 ,  G11C29/1201 ,  G11C29/48 ,  G11C2207/2245 ,  H01L25/18

Abstract: A memory device includes a memory cell array having a plurality of memory cell groups with a corresponding plurality of independent channels, and the device and an operating method thereof perform an internal data processing operation for the memory cell groups. The memory device includes an internal command generator configured to generate one or more internal commands in order to perform an internal data processing operation in response to a reception of a command, and an internal common bus for a common internal processing channel which is disposed to be shared by the plurality of memory cell groups and configured to form a transmission path of data between the plurality of memory cell groups when the internal data processing operation is performed.

公开(公告)号：US20170358327A1

公开(公告)日：2017-12-14

申请号：US15607699

申请日：2017-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： REUM OH ,  JE-MIN RYU ,  PAVAN KUMAR KASIBHATLA

IPC: G11C5/02 ,  G06F12/0893 ,  G06F12/084 ,  G11C7/10 ,  H01L25/18

CPC classification number: G11C5/02 ,  G06F12/084 ,  G06F12/0893 ,  G11C5/025 ,  G11C7/1006 ,  G11C29/1201 ,  G11C29/48 ,  G11C2207/2245 ,  H01L25/18

Abstract: A memory device includes a memory cell array having a plurality of memory cell groups with a corresponding plurality of independent channels, and the device and an operating method thereof perform an internal data processing operation for the memory cell groups. The memory device includes an internal command generator configured to generate one or more internal commands in order to perform an internal data processing operation in response to a reception of a command, and an internal common bus for a common internal processing channel which is disposed to be shared by the plurality of memory cell groups and configured to form a transmission path of data between the plurality of memory cell groups when the internal data processing operation is performed.