公开(公告)号：US20210125998A1

公开(公告)日：2021-04-29

申请号：US16990305

申请日：2020-08-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： SEOK-HYUN KIM ,  Joon Young KANG ,  YOUNGJUN KIM ,  JINHYUNG PARK ,  HO-JU SONG ,  SANG-JUN LEE ,  HYERAN LEE ,  BONG-SOO KIM ,  SUNGWOO KIM

IPC分类号： H01L27/108

摘要： A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.