公开(公告)号：US20170109460A1

公开(公告)日：2017-04-20

申请号：US15277480

申请日：2016-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-HWAN JANG ,  SUNGCHUL KIM ,  JISEONG DOH ,  WONSOK LEE

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F17/5081

Abstract: A semiconductor process simulation method includes classifying a semiconductor process simulation into a plurality of blocks based on an annealing simulation, performing a shape simulation corresponding to a block selected from the plurality of blocks, and performing at least two ion implantation simulations among a plurality of ion implantation simulations corresponding to the selected block in parallel, based on result data of the shape simulation corresponding to the selected block.