公开(公告)号：US20240145567A1

公开(公告)日：2024-05-02

申请号：US18329830

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： INCHAN HWANG ,  MYUNGIL KANG ,  DONGHOON HWANG ,  KYUNGHO KIM ,  SUNGWOO JANG ,  KYUNG HEE CHO

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes: an active area that protrudes from an upper surface of a substrate and extends parallel to the upper surface of the substrate; an element isolating area formed on the substrate and around the active area; a channel formed on an upper surface of the active area; a gate structure that surrounds at least two surfaces of the channel; a spacer formed on both sidewalls of the gate structure; and a source/drain layer in contact with both sidewalls of the channel and insulated from the gate structure by the spacer. The gate structure includes, in a cross-section, a first portion whose width in a first direction increases from an upper portion of the gate structure toward a lower portion closer to the substrate, and a second portion whose width in the first direction remains the same or decreases below the first portion.