公开(公告)号：US20160365440A1

公开(公告)日：2016-12-15

申请号：US15172851

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  SUNHOM STEVE PAAK ,  YEON-HO PARK ,  DONG-HO CHA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

Abstract translation: 提供半导体器件。 半导体器件包括沟道。 半导体器件包括具有第一和第二部分的栅极结构。 通道位于栅极结构的第一和第二部分之间。 接触结构邻近通道侧表面的一部分。 还提供了形成半导体器件的相关方法。