公开(公告)号：US09287327B2

公开(公告)日：2016-03-15

申请号：US14310305

申请日：2014-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/225 ,  H01L27/30 ,  H04N9/04

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

公开(公告)号：US20170294487A1

公开(公告)日：2017-10-12

申请号：US15630571

申请日：2017-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US10950640B2

公开(公告)日：2021-03-16

申请号：US16551114

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu Jin ,  Yong Hun Kwon ,  Young Chan Kim ,  Sae Young Kim ,  Sung Young Seo ,  Moo Sup Lim ,  Tae Sub Jung ,  Sung Ho Choi

IPC: H01L27/146

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

公开(公告)号：US09954034B2

公开(公告)日：2018-04-24

申请号：US15630571

申请日：2017-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/232 ,  H01L27/30 ,  H01L51/44 ,  H04N9/04 ,  H04N5/376 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US09905615B2

公开(公告)日：2018-02-27

申请号：US15233383

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/232 ,  H01L27/30 ,  H01L51/44 ,  H04N9/04 ,  H04N5/376 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.