公开(公告)号：US20230317532A1

公开(公告)日：2023-10-05

申请号：US17987132

申请日：2022-11-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Il Geun JUNG ,  Sung Jin KIM ,  Sang-Ki KIM ,  Joong Won SHIN ,  Sung Yun WOO ,  Sang Hyeon JEON ,  Ji Min CHOI

IPC分类号： H01L21/66 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L22/32 ,  H01L24/06 ,  H01L25/0657 ,  H01L2224/06515 ,  H01L2224/0401 ,  H01L2224/02373 ,  H01L2224/13155 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13144 ,  H01L24/13 ,  H01L2224/13111

摘要： A semiconductor device includes a substrate with first and second surfaces, a first test pad on the first surface of the substrate, a first bump pad on the first surface of the substrate and spaced apart from the first test pad in a first direction, a second bump pad on the first surface of the substrate and spaced apart from the first bump pad, a second test pad on the first surface of the substrate and spaced apart from the second bump pad in the first direction, a first wiring layer in the first direction and electrically connecting the first test pad to the first bump pad, a second wiring layer in the first direction, spaced apart from the first wiring layer, and electrically connecting the second test pad to the second bump pad, and a first bump connected to each of the first and second bump pads.