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公开(公告)号:US20210250530A1
公开(公告)日:2021-08-12
申请号:US17157086
申请日:2021-01-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daehwa PAIK , Seung Hyun LIM , Jaehong KIM , Keunyung BYUN , Jinwoo KIM , Sanghyun CHO
IPC: H04N5/355 , H04N5/378 , H04N5/3745
Abstract: Disclosed is an image sensor that includes a pixel array including first pixels sharing a first floating diffusion region and second pixels sharing a second floating diffusion region, a first analog-to-digital converter, a second analog-to-digital converter, and a switch circuit. In a first mode, the first analog-to-digital converter processes the first pixels, and the second analog-to-digital converter processes the second pixels. In the second mode, the first analog-to-digital converter processes a first image component of a pixel signal of the first pixels, and the second analog-to-digital converter processes a second image component of the pixel signal of the first pixels. An HDR image is implemented based on processing results of the first analog-to-digital converter and the second analog-to-digital converter.
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公开(公告)号:US20190019000A1
公开(公告)日:2019-01-17
申请号:US15978586
申请日:2018-05-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minchul LEE , Kwanhee LEE , Daeyoung CHUNG , Sanghyun CHO , Wonho CHO , Hayoung KO , Jongsung LEE , Heechang HWANG
Abstract: An optics-based fingerprint sensor may include a first photodiode, a first metal shield structure that is formed on the first photodiode and includes a first opening, a first color filter structure that is formed on the first metal shield structure and including a second opening exposing the first opening, a second photodiode that is spaced apart from the first photodiode by a predetermined distance, a first nano-optical filter structure that is formed on the second photodiode, and a first band limit filter structure that is formed on the nano-optical filter structure.
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