公开(公告)号：US20140145067A1

公开(公告)日：2014-05-29

申请号：US14084705

申请日：2013-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Ho SUH ,  Yu Jin PARK ,  Jin Ho SEO ,  Kwi Sung YOO ,  Seung Hyun LIM ,  Seog Heon HAM ,  Kyoung Min KOH ,  Han YANG ,  Jae Cheol YUN ,  Yong LIM ,  Jae Jin JUNG

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H04N5/3742

Abstract: An image sensor includes a first column pair and a second column pair among a plurality of columns of a pixel array, an analog-to-digital converter pair, and a switch arrangement circuit configured to connect the first column pair with the analog-to-digital converter pair in response to first switch control signals such that two rows among a plurality of rows in the pixel array are read during a single access time.

Abstract translation: 图像传感器包括像素阵列的多列之中的第一列对和第二列对，模数转换器对以及被配置为将第一列对与模拟 - 数字转换器对连接的开关布置电路， 数字转换器对响应于第一开关控制信号，使得在单个访问时间期间读取像素阵列中的多行中的两行。

公开(公告)号：US20190082136A1

公开(公告)日：2019-03-14

申请号：US16121586

申请日：2018-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hong KIM ,  Seung Hyun LIM ,  Han Kook CHO ,  Dong Hun LEE ,  Seog Heon HAM

IPC: H04N5/3745 ,  H04N5/378 ,  H04N5/374 ,  H04N5/365

Abstract: An image sensor and an image processing system including the same are provided. The image sensor includes a pixel array including a plurality of pixels each connected to one of first through m-th column lines to output a pixel signal, where “m” is an integer of at least 2; analog-to-digital converters each configured to receive the pixel signal corresponding to one of the first through m-th column lines, to compare the pixel signal with a ramp signal, and to convert the pixel signal to a digital pixel signal; and a blocking circuit connected to an input terminal of at least one of the analog-to-digital converters to block an influence of an operation of others among the analog-to-digital converters.

公开(公告)号：US20160182848A1

公开(公告)日：2016-06-23

申请号：US14973700

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun LIM ,  Jae Hong KIM ,  Han Kook CHO ,  Dong Hun LEE ,  Jin Uk JEON ,  Seog Heon HAM

IPC: H04N5/3745 ,  H04N9/04 ,  H04N5/232

CPC classification number: H04N9/045 ,  H04N5/3456 ,  H04N5/3651 ,  H04N5/378

Abstract: An image sensor for reducing channel variation and an image processing system including the same. The image sensor includes first to mth pixels (m≧2), each of which is connected to a corresponding column line from among first to mth column lines and is configured to output a respective pixel signal.’ The image sensor further includes first to mth bias circuits, each of which is connected to a corresponding column line from among the first to mth column lines and is configured to fix a voltage of the corresponding column line to a bias voltage when a column line-specific pixel is not selected to output the respective pixel signal. An analog-to-digital converter in the image sensor is configured to convert the pixel signals into digital signals.

Abstract translation: 一种用于减少通道变化的图像传感器和包括该图像处理系统的图像处理系统。 图像传感器包括第一至第m个像素（m≥2），每个像素连接到第一至第m列之间的相应列线，并被配置为输出相应的像素信号。“图像传感器还包括第一至第m 偏置电路，每个偏置电路连接到第一至第m列之间的相应列线，并且被配置为当未选择列线特定像素以输出相应的列线的电压时将相应的列线的电压固定为偏置电压 各像素信号。 图像传感器中的模拟 - 数字转换器被配置为将像素信号转换成数字信号。

公开(公告)号：US20240213280A1

公开(公告)日：2024-06-27

申请号：US18599687

申请日：2024-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong KIM ,  Dae Hwa PAIK ,  Seung Hyun LIM ,  Sin Hwan LIM

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

公开(公告)号：US20220037384A1

公开(公告)日：2022-02-03

申请号：US17502499

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong KIM ,  Dae Hwa PAIK ,  Seung Hyun LIM ,  Sin Hwan LIM

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

公开(公告)号：US20210250530A1

公开(公告)日：2021-08-12

申请号：US17157086

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehwa PAIK ,  Seung Hyun LIM ,  Jaehong KIM ,  Keunyung BYUN ,  Jinwoo KIM ,  Sanghyun CHO

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745

Abstract: Disclosed is an image sensor that includes a pixel array including first pixels sharing a first floating diffusion region and second pixels sharing a second floating diffusion region, a first analog-to-digital converter, a second analog-to-digital converter, and a switch circuit. In a first mode, the first analog-to-digital converter processes the first pixels, and the second analog-to-digital converter processes the second pixels. In the second mode, the first analog-to-digital converter processes a first image component of a pixel signal of the first pixels, and the second analog-to-digital converter processes a second image component of the pixel signal of the first pixels. An HDR image is implemented based on processing results of the first analog-to-digital converter and the second analog-to-digital converter.

公开(公告)号：US20200058690A1

公开(公告)日：2020-02-20

申请号：US16354593

申请日：2019-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong KIM ,  Dae Hwa PAIK ,  Seung Hyun LIM ,  Sin Hwan LIM

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

公开(公告)号：US20170358680A1

公开(公告)日：2017-12-14

申请号：US15420512

申请日：2017-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Hoon JEONG ,  Hong Bum PARK ,  HanMei CHOI ,  Jae Young PARK ,  Seung Hyun LIM

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/28 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7854 ,  H01L21/28158 ,  H01L21/823431 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/0657 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device is provided including a fin active region on a substrate. The fin active region includes a lower region, a middle region, and an upper region. The middle region has lateral surfaces with a slope less steep than the lateral surfaces of the upper region. An isolation region is on a lateral surface of the lower region of the fin active region. A gate electrode structure is provided. A gate dielectric structure having an oxidation oxide layer and a deposition oxide layer, while having a thickness greater than half a width of the upper region of the fin active region is provided. The deposition oxide layer is between the gate electrode structure and the fin active region and the gate electrode structure and the isolation region, and the oxidation oxide layer is between the fin active region and the deposition oxide layer.