公开(公告)号：US20240407150A1

公开(公告)日：2024-12-05

申请号：US18737605

申请日：2024-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukhwa Jang ,  Kanguk Kim ,  Hyunsuk Noh ,  Yeongshin Park ,  Sangkyu Sun ,  Sunyoung Lee ,  Sohyang Lee ,  Hongjun Lee ,  Hosun Jung ,  Jeongmin Jin ,  Jeonghee Choi ,  Jinseo Choi ,  Cera Hong

IPC: H10B12/00

Abstract: A method of manufacturing a semiconductor device includes forming a lower structure including a plurality of transistors, forming a conductive layer on the lower structure, forming first preliminary pad mask patterns and wiring mask patterns on the conductive layer, forming pad mask patterns by patterning the first preliminary pad mask patterns while protecting the wiring mask patterns, and etching the conductive layer using the pad mask patterns and the wiring mask patterns as an etching mask to form pad patterns and wiring patterns.

公开(公告)号：US12022645B2

公开(公告)日：2024-06-25

申请号：US17398136

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukhwa Jang ,  Kanguk Kim ,  Hyunsuk Noh ,  Yeongshin Park ,  Sangkyu Sun ,  Sunyoung Lee ,  Sohyang Lee ,  Hongjun Lee ,  Hosun Jung ,  Jeongmin Jin ,  Jeonghee Choi ,  Jinseo Choi ,  Cera Hong

IPC: H10B12/00

CPC classification number: H10B12/0335 ,  H10B12/053 ,  H10B12/09 ,  H10B12/315 ,  H10B12/34 ,  H10B12/50

Abstract: A method of manufacturing a semiconductor device includes forming a lower structure including a plurality of transistors, forming a conductive layer on the lower structure, forming first preliminary pad mask patterns and wiring mask patterns on the conductive layer, forming pad mask patterns by patterning the first preliminary pad mask patterns while protecting the wiring mask patterns, and etching the conductive layer using the pad mask patterns and the wiring mask patterns as an etching mask to form pad patterns and wiring patterns.