公开(公告)号：US20220359596A1

公开(公告)日：2022-11-10

申请号：US17719836

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doojin KIM ,  Junetaeg LEE ,  Sungkwan Kim ,  Seokha LEE

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a substrate including a pixel array zone; a microlens layer on the substrate in the pixel array zone; a first passivation layer on the microlens layer; and a second passivation layer on the first passivation layer, wherein the microlens layer includes: a first lens pattern; a second lens pattern at a side of the first lens pattern; and a first point where the first lens pattern meets the second lens pattern, and at least one of the first passivation layer and the second passivation layer is on the first lens pattern, the second lens pattern, and the first point.

公开(公告)号：US20170047371A1

公开(公告)日：2017-02-16

申请号：US15090883

申请日：2016-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokha LEE ,  Kyungah JEON ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.

Abstract translation: 图像传感器包括：基板，包括多个光电转换部分和从光电转换部分之间的基板表面延伸的像素隔离沟槽，直接在基板表面上的第一固定电荷膜， 在所述第一固定电荷膜和所述像素隔离沟槽的内壁以及直接位于所述第二固定电荷膜上的绝缘层，所述绝缘层被配置为填充所述像素隔离沟槽。

公开(公告)号：US20160035774A1

公开(公告)日：2016-02-04

申请号：US14813182

申请日：2015-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HyunPil Noh ,  Dong-Chul LEE ,  Seokha LEE ,  Chan PARK ,  Seungho SHIN

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。