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1.发明申请公开(公告)号：US20250076847A1
公开(公告)日：2025-03-06
申请号：US18779613
申请日：2024-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Yong LEE , Jee Yong LEE , Seung Hune YANG , Seong Tae JEONG
IPC: G05B19/4099
Abstract: A method for manufacturing a semiconductor device includes extracting coordinates of vertices of patterns from an optical proximity corrected layout data for an optical proximity corrected layout including the patterns; and inputting the coordinates of the vertices into a transformer model to output whether there is a Mask Rule Check (MRC) violation on the optical proximity corrected layout data.
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