公开(公告)号：US20220035237A1

公开(公告)日：2022-02-03

申请号：US17245947

申请日：2021-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Yong LEE ,  Min-Cheol KANG ,  U Seong KIM ,  Seung Hune YANG ,  Jee Yong LEE

IPC: G03F1/36 ,  G03F1/76 ,  G06T7/00 ,  G06T3/40

Abstract: A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error.

公开(公告)号：US20230314957A1

公开(公告)日：2023-10-05

申请号：US18065870

申请日：2022-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jee Yong LEE ,  Soo Yong Lee ,  Yang Woo Heo

IPC: G03F7/20 ,  G06N20/00

CPC classification number: G03F7/70441 ,  G06N20/00 ,  G03F7/705

Abstract: A process proximity correction method includes receiving a first layout including first to m-th regions, wherein each of the first to m-th regions include first to m-th patterns; and generating a second layout by performing machine learning-based process proximity correction based on first to n-th features the first to m-th patterns. Here, m is a natural number equal to or greater than 3 and n is a natural number greater than or equal to 2.

公开(公告)号：US20250076847A1

公开(公告)日：2025-03-06

申请号：US18779613

申请日：2024-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Yong LEE ,  Jee Yong LEE ,  Seung Hune YANG ,  Seong Tae JEONG

IPC: G05B19/4099

Abstract: A method for manufacturing a semiconductor device includes extracting coordinates of vertices of patterns from an optical proximity corrected layout data for an optical proximity corrected layout including the patterns; and inputting the coordinates of the vertices into a transformer model to output whether there is a Mask Rule Check (MRC) violation on the optical proximity corrected layout data.