公开(公告)号：US20220309216A1

公开(公告)日：2022-09-29

申请号：US17491739

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoon LEE ,  Joohyun JEON ,  Sungjin KIM ,  Seunghyun KIM ,  Wonki ROH ,  Chulwoo PARK ,  Seongjae BYEON ,  Taeyoon AN ,  Hyoeun JUNG

IPC: G06F30/3308 ,  G06F30/25

Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

公开(公告)号：US20240395931A1

公开(公告)日：2024-11-28

申请号：US18425196

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongjae BYEON ,  Younggeun Song ,  Wonsok Lee ,  Juho Lee

IPC: H01L29/78 ,  H01L29/10 ,  H10B12/00

Abstract: A semiconductor device includes a substrate; a channel pattern on the substrate, the channel pattern having sidewalls extending in a vertical direction perpendicular to a surface of the substrate and a lower portion connecting lower portions of two sidewalls facing each other in a horizontal direction; a gate insulation layer pattern and a first conductive layer pattern sequentially stacked laterally on an inner sidewall of the channel pattern; and a second conductive layer pattern contacting at least an uppermost surface and an upper outer sidewall of the channel pattern, the second conductive pattern being spaced apart from the first conductive layer pattern.