公开(公告)号：US20230187178A1

公开(公告)日：2023-06-15

申请号：US17993055

申请日：2022-11-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Youngil KANG ,  Byeongsang KIM ,  Jongmu KIM ,  Yongbeom PARK ,  Dougyong SUNG ,  Yunjae LEE ,  Seugkyu LIM ,  Kyuhee HAN

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J2237/335 ,  H01J37/32724

摘要： A substrate processing apparatus includes: a process chamber; a substrate support structure disposed at a lower portion of the process chamber and configured to accommodate a substrate; and a gas supply module disposed at an upper portion of the process chamber and supplying a process gas to the substrate, wherein the gas supply module includes a showerhead that includes: a first showerhead body including a plurality of injection ports configured to transfer gas transferred from a gas inlet into the process chamber; and a coating layer covering the first showerhead body and including aluminum fluoride, wherein the first showerhead body includes a metal matrix composite (MMC).