公开(公告)号：US20220336489A1

公开(公告)日：2022-10-20

申请号：US17529331

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seugmin LEE ,  Kiyoon KANG ,  Kangmin KIM ,  Dongseong KIM ,  Junhyoung KIM ,  Byungkwan YOU

IPC: H01L27/11582 ,  H01L23/00

Abstract: A semiconductor device of the disclosure includes a peripheral circuit structure including a peripheral transistor, a semiconductor layer on the peripheral circuit structure, a source structure on the semiconductor layer, a gate stack structure disposed on the source structure and including insulating patterns and conductive patterns alternately stacked, a memory channel structure electrically connected to the source structure and penetrating the gate stack structure, a support structure penetrating the gate stack structure and the source structure, and an insulating layer covering the gate stack structure, the memory channel structure and the support structure. The support structure includes an outer support layer contacting side walls of the insulating patterns and side walls of the conductive patterns, and a support pattern and an inner support layer contacting an inner side wall of the outer support layer.