公开(公告)号：US20220336489A1

公开(公告)日：2022-10-20

申请号：US17529331

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seugmin LEE ,  Kiyoon KANG ,  Kangmin KIM ,  Dongseong KIM ,  Junhyoung KIM ,  Byungkwan YOU

IPC: H01L27/11582 ,  H01L23/00

Abstract: A semiconductor device of the disclosure includes a peripheral circuit structure including a peripheral transistor, a semiconductor layer on the peripheral circuit structure, a source structure on the semiconductor layer, a gate stack structure disposed on the source structure and including insulating patterns and conductive patterns alternately stacked, a memory channel structure electrically connected to the source structure and penetrating the gate stack structure, a support structure penetrating the gate stack structure and the source structure, and an insulating layer covering the gate stack structure, the memory channel structure and the support structure. The support structure includes an outer support layer contacting side walls of the insulating patterns and side walls of the conductive patterns, and a support pattern and an inner support layer contacting an inner side wall of the outer support layer.

公开(公告)号：US20220093629A1

公开(公告)日：2022-03-24

申请号：US17242696

申请日：2021-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyoung KIM ,  Chanho KIM ,  Kyunghwa YUN ,  Dongseong KIM

IPC: H01L27/11573 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11526 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L25/065

Abstract: A semiconductor device and an electronic system, the semiconductor device including a semiconductor substrate; a peripheral circuit structure including peripheral circuits integrated on the semiconductor substrate, and a landing pad connected to the peripheral circuits; a semiconductor layer on the peripheral circuit structure; a metal structure in contact with a portion of the semiconductor layer, the metal structure including first portions extending in a first direction, second portions connected to the first portions and extending in a second direction crossing the first direction, and a via portion vertically extending from at least one of the first and second portions and being connected to the landing pad; and a stack including insulating layers and electrodes vertically and alternately stacked on the metal structure.