公开(公告)号：US11942427B2

公开(公告)日：2024-03-26

申请号：US17947282

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong Yoo ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/522 ,  H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/28568 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53257

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US20230170252A1

公开(公告)日：2023-06-01

申请号：US17933216

申请日：2022-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Jin Lee ,  Seung Yong Yoo ,  Eun-Ji Jung

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/49

CPC classification number: H01L21/76811 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266 ,  H01L29/4983

Abstract: The present disclosure provides a semiconductor device capable of improving element performance and reliability. The semiconductor device comprises a lower wiring structure, an upper interlayer insulating layer disposed on the lower wiring structure and including an upper wiring trench, the upper wiring trench exposing a portion of the lower wiring structure, and an upper wiring structure including an upper liner and an upper filling layer on the upper liner in the upper wiring trench, wherein the upper liner includes a sidewall portion extending along a sidewall of the upper wiring trench and a bottom portion extending along a bottom surface of the upper wiring trench, the sidewall portion of the upper liner includes cobalt (Co) and ruthenium (Ru), and the bottom portion of the upper liner is formed of cobalt (Co).

公开(公告)号：US11450607B2

公开(公告)日：2022-09-20

申请号：US16892649

申请日：2020-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong Yoo ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.