公开(公告)号：US20240170578A1

公开(公告)日：2024-05-23

申请号：US18378170

申请日：2023-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungbeck LEE ,  Mintae RYU ,  Minjin KWON ,  Hyeonjeong SUN ,  Wonsok LEE ,  Minhee CHO

IPC: H01L29/786 ,  H01L27/06 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device includes: a first insulation layer disposed on a substrate; a lower gate pattern disposed on the first insulation layer; a second insulation layer covering at least a portion of the lower gate pattern; a first lower gate insulation layer disposed on the lower gate pattern and the second insulation layer; a source pattern and a drain pattern disposed on the first lower gate insulation layer, wherein the source pattern and the drain pattern are spaced apart from each other to include a trench facing the lower gate pattern; an oxide semiconductor layer formed along surfaces of the source and drain patterns and a bottom surface of the trench; an upper gate insulation layer disposed on the oxide semiconductor layer; and an upper gate pattern disposed on the upper gate insulation layer and filling the trench.