公开(公告)号：US11329204B2

公开(公告)日：2022-05-10

申请号：US16724776

申请日：2019-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shunsuke Kimura ,  Sungtae Kim

IPC: H01L33/60 ,  H01L33/00 ,  H01L25/075 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/46 ,  H01L33/20

Abstract: A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

公开(公告)号：US11263933B2

公开(公告)日：2022-03-01

申请号：US16169429

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Ryong Han ,  Shunsuke Kimura

IPC: G09F9/302 ,  H01L25/075 ,  G09G3/32 ,  G06F3/14 ,  H01L33/52

Abstract: An LED panel includes a panel body having a substrate, a plurality of LED elements and a mold, and a light absorbing layer formed at a lateral side of the panel body to absorb at least one of ambient light or light emitted from the plurality of LED elements. The light absorbing layer prevents a seam formed by a gap between the adjacent LED panels from being visible. The light absorbing layer absorbs the external light incident on the gap or absorbs the light emitted from the LED element to the gap.

公开(公告)号：US11133431B2

公开(公告)日：2021-09-28

申请号：US16684720

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jitsuo Ota ,  Jihoon Kang ,  Sungtae Kim ,  Shunsuke Kimura ,  Yongdok Cha

IPC: H01L33/00 ,  H01L31/12 ,  H01L29/26 ,  H01L27/15 ,  H01L33/10 ,  H01L33/62 ,  H01L25/075

Abstract: An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.