公开(公告)号：US20180151218A1

公开(公告)日：2018-05-31

申请号：US15691828

申请日：2017-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANG-HO YUN ,  Min-Su Kim ,  Sung-Joon Kim ,  So-Ra Park ,  Hyun-Jung Yoo

IPC: G11C11/406 ,  G06F3/06

CPC classification number: G11C11/40611 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0673 ,  G11C11/40618

Abstract: A method of operating a memory device, a first setting signal is received by a first memory device among a plurality of memory devices. The first memory device has a first storage capacity, and the memory devices may be connected to one another by a single channel. A second setting signal is received by a second memory device among the plurality of memory devices. The second memory device has a second storage capacity different from the first storage capacity. N refresh operations are performed by the first memory device based on a first refresh command and the first setting signal during a first refresh period. M refresh operations are performed by the second memory device based on a second refresh command and the second setting signal during a second refresh period. A duration of the second refresh period is substantially the same as a duration of the first refresh period.

公开(公告)号：US10325643B2

公开(公告)日：2019-06-18

申请号：US15691828

申请日：2017-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Ho Yun ,  Min-Su Kim ,  Sung-Joon Kim ,  So-Ra Park ,  Hyun-Jung Yoo

IPC: G06F3/06 ,  G11C11/406

Abstract: A method of operating a memory device, a first setting signal is received by a first memory device among a plurality of memory devices. The first memory device has a first storage capacity, and the memory devices may be connected to one another by a single channel. A second setting signal is received by a second memory device among the plurality of memory devices. The second memory device has a second storage capacity different from the first storage capacity. N refresh operations are performed by the first memory device based on a first refresh command and the first setting signal during a first refresh period. M refresh operations are performed by the second memory device based on a second refresh command and the second setting signal during a second refresh period. A duration of the second refresh period is substantially the same as a duration of the first refresh period.