-
公开(公告)号:US20210325773A1
公开(公告)日:2021-10-21
申请号:US16952330
申请日:2020-11-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soo Yong LEE , Seo Rim MOON , Kyung Jae PARK , Soo Ryong LEE , Kang-Min JUNG
IPC: G03F1/36 , G03F7/20 , H01L21/027
Abstract: An optical proximity correction method includes extracting first patterns from a pattern mask, performing lithography on at least a part of the first patterns to form first-first patterns, forming the first-first patterns at positions where the first patterns are formed, and performing correction on the pattern mask on which the first-first patterns are formed.