公开(公告)号：US20220359533A1

公开(公告)日：2022-11-10

申请号：US17871059

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Kyun An ,  Bumsoo Kim

IPC: H01L27/108 ,  H01L21/32 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3215

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

公开(公告)号：US10403735B2

公开(公告)日：2019-09-03

申请号：US15409877

申请日：2017-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Kyun An ,  Dong Hyun Im

IPC: H01L29/66 ,  H01L27/24 ,  H01L29/06 ,  H01L29/861 ,  H01L29/36 ,  H01L27/22 ,  H01L45/00

Abstract: Forming a semiconductor device includes forming a first conductive line on a substrate, forming a memory cell including a switching device and a data storage element on the first conductive line, and forming a second conductive line on the memory cell. Forming the switching device includes forming a first semiconductor layer, forming a first doped region by injecting a n-type impurity into the first semiconductor layer, forming a second semiconductor layer thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region, forming a second doped region by injecting a p-type impurity into an upper region of the second semiconductor layer, and forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a P-N junction of the P-N diode in the second semiconductor layer.

公开(公告)号：US20240038863A1

公开(公告)日：2024-02-01

申请号：US18487177

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H01L21/02532 ,  H01L21/02667 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US11824098B2

公开(公告)日：2023-11-21

申请号：US17822594

申请日：2022-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US11456366B2

公开(公告)日：2022-09-27

申请号：US17335455

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/161 ,  H01L27/092 ,  H01L29/423 ,  H01L29/40 ,  H01L21/02 ,  H01L27/108

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US20220115384A1

公开(公告)日：2022-04-14

申请号：US17242932

申请日：2021-04-28

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Ho Kyun An ,  Bumsoo KIM

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/32

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

公开(公告)号：US11800701B2

公开(公告)日：2023-10-24

申请号：US17871059

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Kyun An ,  Bumsoo Kim

IPC: H10B12/00 ,  H01L21/32 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3215

CPC classification number: H10B12/09 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28035 ,  H01L21/32 ,  H01L21/32155 ,  H10B12/053 ,  H10B12/315 ,  H10B12/34 ,  H10B12/50

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

公开(公告)号：US20220416038A1

公开(公告)日：2022-12-29

申请号：US17822594

申请日：2022-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H01L27/108

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US20220115511A1

公开(公告)日：2022-04-14

申请号：US17335455

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L27/108 ,  H01L21/02 ,  H01L29/40

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US12080774B2

公开(公告)日：2024-09-03

申请号：US18487177

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L21/02 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.