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公开(公告)号:US20250080135A1
公开(公告)日:2025-03-06
申请号:US18953753
申请日:2024-11-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changkyu SEOL , Jiyoup KIM , Hyejeong SO , Myoungbo KWAK , Pilsang YOON , Sucheol LEE , Youngdon CHOI , Junghwan CHOI
Abstract: Encoding and decoding apparatuses and methods for implementing multi-mode coding are provided. The apparatus includes a transmitter and a receiver connected to a data bus. When data bursts are converted by the transmitter into codewords each including a plurality of symbols and/or a codeword received by the receiver is recovered as data bursts, maximum transition avoidance (MTA) codeword mappings in which no maximum transition (MT) event occurs between the plurality of symbols and minimum DC current (MDC) codeword mappings related to minimum power consumption of the plurality of symbols are used.
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公开(公告)号:US20220188013A1
公开(公告)日:2022-06-16
申请号:US17356687
申请日:2021-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungsuk WOO , Changkyu SEOL , Sucheol LEE
IPC: G06F3/06
Abstract: A memory device includes: a memory cell array; a data selector configured to receive data from the memory cell array, and to output the received data as first sub-data and second sub-data; a cyclic redundancy check (CRC) generator configured to generate first CRC values corresponding to the first sub-data, and to generate second CRC values corresponding to the second sub-data; a CRC selector configured to determine an order of the first CRC values and the second CRC values, and to output one of the first CRC values and one of the second CRC values according to the determined order; and a transmitter configured to receive the first CRC values and the second CRC values according to the determined order, and to transmit CRC values of the data by a multilevel signaling method.
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公开(公告)号:US20220247438A1
公开(公告)日:2022-08-04
申请号:US17490563
申请日:2021-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: CHANGKYU SEOL , BYUNG-SUK WOO , Sucheol LEE
Abstract: An electronic circuit converts a receive signal being analog into reception data being digital. The electronic circuit includes a delay circuit that receives a first receive signal and outputs a reference signal, the reference signal being generated by delaying the first receive signal as much as one of a plurality of different timing delays respectively set to a plurality of loops, a sampler that receives a second receive signal and samples the second receive signal based on the reference signal in each of the plurality of loops, a timing skew estimation circuit that outputs a compensation signal for compensating for a timing skew by extracting a statistical characteristic of a plurality of sample data sampled through the sampler and estimating the timing skew based on the statistical characteristic, and a controller that controls an operation of the timing skew estimation circuit.
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公开(公告)号:US20220199126A1
公开(公告)日:2022-06-23
申请号:US17377654
申请日:2021-07-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sucheol LEE , Changkyu SEOL , Byungsuk WOO
IPC: G11C5/14 , G11C11/4074
Abstract: A receiver including: a data processing circuit, in a training mode, to compare a multi-level signal with first and second voltage signals, and to generate data density signals; a counter circuit to count the data density signals to generate counting values; a control circuit to store, in a register set, a voltage range, counting values corresponding to the voltage range and a control code associated with a first level of the first voltage signal and a second level of the second voltage signal, the voltage range being based on the first and second voltage signals; and a voltage generation circuit, in the training mode, to apply the first and second voltage signals to the data processing circuit and to increase the first level and the second level by a difference between the first and second control signals in response to the control code from the control circuit.
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公开(公告)号:US20240030935A1
公开(公告)日:2024-01-25
申请号:US18480261
申请日:2023-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changkyu SEOL , Jiyoup KIM , Hyejeong SO , Myoungbo KWAK , Pilsang YOON , Sucheol LEE , Youngdon CHOI , Junghwan CHOI
IPC: H03M7/14
CPC classification number: H03M7/14 , G06F13/1673
Abstract: Encoding and decoding apparatuses and methods for implementing multi-mode coding are provided. The apparatus includes a transmitter and a receiver connected to a data bus. When data bursts are converted by the transmitter into codewords each including a plurality of symbols and/or a codeword received by the receiver is recovered as data bursts, maximum transition avoidance (MTA) codeword mappings in which no maximum transition (MT) event occurs between the plurality of symbols and minimum DC current (MDC) codeword mappings related to minimum power consumption of the plurality of symbols are used.
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公开(公告)号:US20220294476A1
公开(公告)日:2022-09-15
申请号:US17689462
申请日:2022-03-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changkyu SEOL , Jiyoup KIM , Hyejeong SO , Myoungbo KWAK , Pilsang YOON , Sucheol LEE , Youngdon CHOI , Junghwan CHOI
Abstract: Encoding and decoding apparatuses and methods for implementing multi-mode coding are provided. The apparatus includes a transmitter and a receiver connected to a data bus. When data bursts are converted by the transmitter into codewords each including a plurality of symbols and/or a codeword received by the receiver is recovered as data bursts, maximum transition avoidance (MTA) codeword mappings in which no maximum transition (MT) event occurs between the plurality of symbols and minimum DC current (MDC) codeword mappings related to minimum power consumption of the plurality of symbols are used.
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公开(公告)号:US20220068332A1
公开(公告)日:2022-03-03
申请号:US17344610
申请日:2021-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sucheol LEE , Jaewoo PARK , Younghoon SON , Youngdon CHOI , Junghwan CHOI
IPC: G11C7/22 , G11C7/10 , H03K19/017 , H03K19/1776 , H03K19/17736
Abstract: A memory device includes a memory cell array and a data input and output circuit configured to output a data signal (DQ signal) including data read from the memory cell array and a data strobe signal (DQS signal) including a toggle pattern associated with an operating condition of the memory device based on n-level pulse amplitude modulation (PAMn), wherein n is an integer greater than or equal to 4.
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