公开(公告)号：US20230214321A1

公开(公告)日：2023-07-06

申请号：US17848716

申请日：2022-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Surendra SINGH ,  Dinesh GEHLOT ,  Mallikarjun Shivappa BIDARI ,  Raju Udava SIDDAPPA ,  Shashank VIMAL ,  Shreya GANATRA ,  Sujay Shankar GAITONDE ,  Tushar VRIND ,  Venkata Raju INDUKURI

IPC: G06F12/02 ,  G06F9/32 ,  G06F9/30

CPC classification number: G06F12/0253 ,  G06F12/0238 ,  G06F9/321 ,  G06F9/3004

Abstract: A method for managing memory leaks in a memory device includes grouping, by a garbage collection system, a plurality of similar memory allocations of the memory device into one or more Unique Fixed Identifiers (UFIs); identifying, by the garbage collection system, one of the one or more UFIs having a highest accumulated memory size and adding each of the plurality of memory allocations in the identified one of the one or more UFIs into a Potential Leak Candidate List (PLCL); identifying, by the garbage collection system, the memory leaks in the memory device by identifying unreferenced memory addresses associated with the plurality of memory allocations in the PLCL; and releasing, by the garbage collection system, the identified unreferenced memory addresses associated with the plurality of memory allocations corresponding to the memory leaks into the memory device.