公开(公告)号：US10553449B2

公开(公告)日：2020-02-04

申请号：US15700491

申请日：2017-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Hye Hwang ,  Youn-Joung Cho ,  Won-Woong Chung ,  Nam-Gun Kim ,  Kong-Soo Lee ,  Badro Im ,  Yoon-Chul Cho

IPC: H01L21/3213 ,  H01L21/311

Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.