公开(公告)号：US20130299771A1

公开(公告)日：2013-11-14

申请号：US13748622

申请日：2013-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-pil Youn ,  Dong-won Kim ,  Taek-sung Kim

IPC: H01L29/78 ,  H01L27/092

CPC classification number: H01L29/78 ,  H01L21/845 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/78696 ,  H01L2029/7857

Abstract: A semiconductor device has a semiconductor body including a source region, a channel region, and a drain region, which are sequentially arranged in a longitudinal direction and are doped with the same type of impurity, a gate electrode including metal, and a gate dielectric layer interposed between the semiconductor body and the gate electrode.

Abstract translation: 半导体器件具有包括源区域，沟道区域和漏极区域的半导体本体，其沿纵向依次布置并掺杂相同类型的杂质，包括金属的栅极电极和栅极介电层 插入在半导体本体和栅电极之间。