公开(公告)号：US20200051909A1

公开(公告)日：2020-02-13

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young KIM ,  Kyu Hee HAN ,  Sung Bin PARK ,  Yeong Gil KIM ,  Jong Min BAEK ,  Kyoung Woo LEE ,  Deok Young JUNG

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/768

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.