公开(公告)号：US12218002B2

公开(公告)日：2025-02-04

申请号：US18537896

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin Kang ,  Jong Min Baek ,  Woo Kyung You ,  Kyu-Hee Han ,  Han Seong Kim ,  Jang Ho Lee ,  Sang Shin Jang

IPC: H01L21/768 ,  H01L23/48

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

公开(公告)号：US11348827B2

公开(公告)日：2022-05-31

申请号：US16798789

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin Kang ,  Jong Min Baek ,  Woo Kyung You ,  Kyu-Hee Han ,  Han Seong Kim ,  Jang Ho Lee ,  Sang Shin Jang

IPC: H01L21/768 ,  H01L23/48

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

公开(公告)号：US11881430B2

公开(公告)日：2024-01-23

申请号：US17826366

申请日：2022-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin Kang ,  Jong Min Baek ,  Woo Kyung You ,  Kyu-Hee Han ,  Han Seong Kim ,  Jang Ho Lee ,  Sang Shin Jang

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76808 ,  H01L23/481 ,  H01L21/76832

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.