公开(公告)号：US20240421216A1

公开(公告)日：2024-12-19

申请号：US18676858

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggyu Han ,  Heonjong Shin ,  Juneyoung Park ,  Sanghee Lee ,  Jaeran Jang ,  Mingi Chung

IPC: H01L29/775 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66

Abstract: An integrated circuit semiconductor device includes a base layer including a first surface and a second surface, a gate structure on the first surface of the base layer, a first source and drain region on a side of the gate structure, a second source and drain region on another side of the gate structure, a first placeholder in the base layer in a lower portion of the first source and drain region and electrically connected to the first source and drain region, a second placeholder in the base layer in a lower portion of the second source and drain region, and a metal power rail on the first placeholder and the second placeholder on the second surface of the base layer and electrically connected to the first placeholder.