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公开(公告)号:US20240421216A1
公开(公告)日:2024-12-19
申请号:US18676858
申请日:2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunggyu Han , Heonjong Shin , Juneyoung Park , Sanghee Lee , Jaeran Jang , Mingi Chung
IPC: H01L29/775 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/66
Abstract: An integrated circuit semiconductor device includes a base layer including a first surface and a second surface, a gate structure on the first surface of the base layer, a first source and drain region on a side of the gate structure, a second source and drain region on another side of the gate structure, a first placeholder in the base layer in a lower portion of the first source and drain region and electrically connected to the first source and drain region, a second placeholder in the base layer in a lower portion of the second source and drain region, and a metal power rail on the first placeholder and the second placeholder on the second surface of the base layer and electrically connected to the first placeholder.