公开(公告)号：US20220310698A1

公开(公告)日：2022-09-29

申请号：US17526262

申请日：2021-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunmog PARK ,  Jungyu LEE ,  Daehwan KANG ,  Sungho EUN

IPC: H01L27/24

Abstract: A resistive memory device includes: memory cells overlapping one another in a vertical direction within a cell array region and each including a switching element and a variable resistive element; first conductive lines each being connected to the switching element; a second conductive line connected to the variable resistive element and conductive pads arranged in a connection region and connected to respective one ends of the first conductive lines, respectively, and having different lengths in the second horizontal direction. A lower conductive pad from among the conductive pads includes a first portion covered by an upper conductive pad, and a second portion not covered by the upper conductive pad, and a thickness of each of the first and second portions in the vertical direction is greater than a thickness of each of the first conductive lines in the vertical direction.