公开(公告)号：US11257925B2

公开(公告)日：2022-02-22

申请号：US16836138

申请日：2020-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changwoo Noh ,  Munhyeon Kim ,  Hansu Oh ,  Sungman Whang ,  Dongwon Kim

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L29/423 ,  H01L29/165 ,  H01L21/311

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.

公开(公告)号：US20190198636A1

公开(公告)日：2019-06-27

申请号：US16015852

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd

Inventor： Changwoo Noh ,  Munhyeon Kim ,  Hansu Oh ,  Sungman Whang ,  Dongwon Kim

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/6656 ,  H01L21/31144 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.