公开(公告)号：US10692781B2

公开(公告)日：2020-06-23

申请号：US15928858

申请日：2018-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn Kim ,  Ji Hwan An ,  Tae Won Ha ,  Se Ki Hong

IPC: H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088

Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.

公开(公告)号：US10553693B2

公开(公告)日：2020-02-04

申请号：US15958061

申请日：2018-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Ki Hong ,  Ju Youn Kim ,  Jin-Wook Kim ,  Tae Eung Yoon ,  Tae Won Ha ,  Jung Hoon Seo ,  Seul Gi Yun

IPC: H01L29/00 ,  H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.

公开(公告)号：US09972544B2

公开(公告)日：2018-05-15

申请号：US15390762

申请日：2016-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn Kim ,  Ji Hwan An ,  Tae Won Ha ,  Se Ki Hong

IPC: H01L21/82 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L21/823878 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.