公开(公告)号：US20230020305A1

公开(公告)日：2023-01-19

申请号：US17736229

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyung Nam KANG ,  Jeong Hoon NAM ,  Se Jin KYUNG ,  Dae Wee KONG ,  Tae-Min KIM

IPC: H01L21/67 ,  C23C16/30 ,  C22C21/00

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:
[Chemical Formula] MxAl1−xNy, wherein x and y satisfy the following relations: 0