公开(公告)号：US20230020305A1

公开(公告)日：2023-01-19

申请号：US17736229

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyung Nam KANG ,  Jeong Hoon NAM ,  Se Jin KYUNG ,  Dae Wee KONG ,  Tae-Min KIM

IPC: H01L21/67 ,  C23C16/30 ,  C22C21/00

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:
[Chemical Formula] MxAl1−xNy, wherein x and y satisfy the following relations: 0

公开(公告)号：US20200149642A1

公开(公告)日：2020-05-14

申请号：US16544513

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Wee KONG ,  Se Jin KYUNG ,  Chul Hwan CHOI

IPC: F16K11/10 ,  F15D1/02

Abstract: A valve apparatus includes a valve block with a main flow path, a first valve installed on the valve block and connected to the main flow path so that when the first valve turns on, a first fluid is supplied from the main flow path to a process chamber via the first valve, and a second valve installed on the valve block and connected to the main flow path so that when the first valve turns off and the second valve turns on, a second fluid is supplied from the main flow path to a waste gas treatment system via the second valve. The main flow path is disposed parallel to a central axis passing through a center of the valve block and two opposing surfaces of the valve block perpendicularly thereto. The main flow path is disposed to be offset from the central axis toward the first valve.