公开(公告)号：US20250069660A1

公开(公告)日：2025-02-27

申请号：US18454144

申请日：2023-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tal PHILOSOF ,  Lior KISSOS ,  Ariel DOUBCHAK ,  Amit BERMAN

IPC: G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: Provided are a memory system, a method of reading data and a method of finding read thresholds. The method of finding read thresholds includes: selecting a channel distribution among a plurality of channel distributions that corresponds to a read page of the memory device to be read in response to a read command; generating a Trellis diagram based on a decoding scheme and a type of the read page; determining an optimal path through the Trellis diagram using the selected channel distribution according to a dynamic programming algorithm; and finding the read thresholds from the optimal path.

公开(公告)号：US20230370090A1

公开(公告)日：2023-11-16

申请号：US18358660

申请日：2023-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ariel DOUBCHAK ,  Avner DOR ,  Yaron SHANY ,  Tal PHILOSOF ,  Yoav SHERESHEVSKI ,  Amit BERMAN

IPC: H03M13/11 ,  H03M13/00

CPC classification number: H03M13/1174 ,  H03M13/1108 ,  H03M13/616

Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.