公开(公告)号：US20230174429A1

公开(公告)日：2023-06-08

申请号：US18076062

申请日：2022-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwan KIM ,  Takafumi Noguchi ,  Toshihiro IIzuka ,  Younseon Wang ,  Kenichi Nagayama

IPC: C04B35/553 ,  C04B35/645

CPC classification number: C04B35/553 ,  C04B35/645 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/666 ,  C04B2235/786 ,  C04B2235/5436 ,  C04B2235/5445 ,  H01L21/68757

Abstract: Provided are a sintered material having high corrosion resistance, a method of manufacturing the sintered material, a member for a semiconductor manufacturing apparatus, a method of manufacturing a member for a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus, and a method of manufacturing a semiconductor manufacturing apparatus. The sintered material according to an embodiment includes 50 mass% or more of yttrium oxyfluoride, has a relative density of 97.0% or more, and has a Vickers hardness of 5.0 GPa or more. The method of manufacturing a sintered material according to an embodiment includes forming a molded body including yttrium oxyfluoride powder having a particle size of 0.3 µm or less, and sintering the molded body under an atmospheric pressure at a temperature of 800° C. or less.