公开(公告)号：US20150029790A1

公开(公告)日：2015-01-29

申请号：US14485049

申请日：2014-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WAN NAM ,  WON-TEACK JUNG ,  JUNGHOON PARK

IPC: G11C16/14 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.