公开(公告)号：US20240322043A1

公开(公告)日：2024-09-26

申请号：US18609539

申请日：2024-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOOYEOL MAENG ,  CHANGKI BAEK ,  KANGWOOK PARK ,  HYANGWOO KIM ,  KYOUNGHWAN OH ,  HYUNGJIN LEE

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7856 ,  H01L29/408 ,  H01L29/4983 ,  H01L29/66803 ,  H01L29/7835

Abstract: An integrated circuit device includes a fin body, a source and a drain disposed on the fin body, a channel disposed in the fin body between the source and the drain, a drain extension region disposed in the fin body between the drain and the channel, a gate insulating film disposed on the channel and the drain extension region, a high-permittivity layer disposed on the gate insulating film over the drain extension region, and a double gate including a first gate disposed on the gate insulating film above the channel adjacent to the source and a second gate in contact with the first gate. A first work function of the first gate is greater than a second work function of the second gate.