公开(公告)号：US12224315B2

公开(公告)日：2025-02-11

申请号：US17516900

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hun Park ,  Won Cheol Jeong ,  Jin Wook Kim ,  Deok Han Bae ,  Myung Yoon Um ,  In Yeal Lee ,  Yoon Young Jung

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US11024631B2

公开(公告)日：2021-06-01

申请号：US16504867

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Cheol Jeong ,  Hag Ju Cho

IPC: H01L27/11 ,  H01L29/78 ,  H01L27/092

Abstract: An integrated circuit device includes a static random access memory (SRAM) array, and the SRAM array includes first to fourth active fins extending parallel to each other in a first direction, a first gate line overlapping the second to fourth active fins, a second gate line spaced apart from the first gate line in the first direction and overlapping the first to third active fins, a third gate line spaced apart from the first gate line in the first direction and overlapping the fourth active fin, a fourth gate line spaced apart from the second gate line in the first direction and overlapping the first active fin, a first field isolation layer contacting one end of the second active fin, and a second field isolation layer contacting one end of the third active fin. The first to fourth gate lines extend in a second direction intersecting the first direction.

公开(公告)号：US20170067973A1

公开(公告)日：2017-03-09

申请号：US15256549

申请日：2016-09-03

Applicant: Samsung Electronics Co., Ltd

Inventor： Eun Je Hyun ,  Seul Gi Park ,  Ju Hyung Lee ,  Won Cheol Jeong

IPC: G01R33/34 ,  A61B5/055 ,  G01R33/3415

CPC classification number: G01R33/34084 ,  A61B5/055 ,  A61B5/0555 ,  A61B5/6823 ,  A61B5/6824 ,  A61B5/6828 ,  A61B2562/164 ,  A61B2562/166 ,  G01R33/34007 ,  G01R33/3415

Abstract: A coil assembly and a magnetic resonance imaging (MRI) apparatus including the same are disclosed. After completion of inspection or repair of the coil assembly, the coil assembly is easily coupled to the Mill apparatus. The coil assembly is configured to interact with a magnetic field generated from a MM apparatus and includes a first case configured to be bendable, a second case configured to be bendable and detachably coupled to the first case, and a printed circuit board substrate disposed between the first case and the second case.

Abstract translation: 公开了包括其的线圈组件和磁共振成像（MRI）装置。 在完成线圈组件的检查或修理之后，线圈组件容易地连接到铣床设备。 线圈组件被配置为与由MM设备产生的磁场相互作用并且包括被配置为可弯曲的第一壳体，被配置为可弯曲和可拆卸地联接到第一壳体的第二壳体，以及布置在第二壳体之间的印刷电路板基板 第一种情况和第二种情况。